Passivating Contacts: In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts (Adv. Mater. Interfaces 21/2020)

In article 2000589, Stefaan De Wolf and co-workers introduce a simple and scalable method to grow very thin SiOx layers on silicon wafers by their exposure to a CO2 plasma. Subsequently, boron-doped amorphous silicon layers are deposited in the same conventional plasma-enhanced chemical vapor deposition chamber. Upon annealing, such stacks crystallize into highly efficient passivation contacts for silicon solar cells.