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Resistive Switching Memory: Lead‐Free Dual‐Phase Halide Perovskites for Preconditioned Conducting‐Bridge Memory (Small 41/2020)

Ji Su Han,Quyet Van Le,Hyojung Kim,Yoon Jung Lee,Da Eun Lee,In Hyuk Im,Min Kyung Lee,Seung Ju Kim,Jaehyun Kim,Kyung Ju Kwak,Min‐Ju Choi,Sol A Lee,Kootak Hong,Soo Young Kim,Ho Won Jang

Small（2020）

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Abstract
In article number 2003225, Soo Young Kim, Ho Won Jang, and co-workers successfully fabricate preconditioned resistive switching memory devices using lead-free dual-phase halide perovskites. The devices show filamentary resistive switching behavior involving Ag cations in halide perovskites with ultra-low operating voltages, and high on/off ratio.
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Key words
Organometal Halide Perovskites,Perovskite Solar Cells
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