Highly linear fundamental up‐converter in InP DHBT technology for W‐band applications
Microwave and Optical Technology Letters（2020）
Abstract
A fundamental up-converter with high linearity is presented, realized as full Gilbert cell (GC) mixer using a 800 nm transferred substrate (TS) InP-DHBT technology. The LO input of the Gilbert cell conducts from 75 to 100 GHz and requires 5 dBm of input power. The GC attains a single sideband (SSB) conversion gain of 10 +/- 1 dB within the frequency from 82 to 95 GHz with a saturated output power of -1 dBm at 86 GHz and >5 dB conversion gain between 75 and 100 GHz. The up-converter exhibits 25 GHz of IF bandwidth. The DC power consumption is only 51 mW.
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Key words
Local oscillator (LO), indium phosphide double heterojunction bipolar transistor (DHBT), single sideband (SSB), upper side band (USB), lower side band (LSB), transferred-substrate (TS) process, Gilbert cell (GC) mixer
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