Thermal conductivity of thin films of gallium nitride, doped with aluminium, measured with 3ω method

Abstract Thermal conductivity of AlxGa1-xN thin films, grown by metal organic vapor phase epitaxy, was measured with the use of 3ω method in the temperature range from 150 to 300 K. The aim of the present study is the investigation of the influence of the Al amount on the thermal conductivity of AlGaN films of the same thickness. Results of the conducted measurements show that thermal conductivity increases with increasing temperature and decreases with increasing amount of alloying element. Those results are in good agreement with previous reports.