High-Temperature Spin Manipulation on Color Centers in Rhombic Silicon Carbide Polytype 21R-SiC

JETP LETTERS(2021)

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摘要
A family of atomic-scale color centers, the spin state of which can be controlled via optical and microwave channels, has been found in the rhombic polytype of silicon carbide 21R-SiC considered as a natural superlattice. Zero-phonon lines are observed in photoluminescence corresponding to spin-3/2 centers, which differ in fine structure splitting in the ground and excited states. Giant changes in the photoluminescence intensity under conditions of magnetic resonance and anticrossing of the spin levels of the ground and excited states are demonstrated, which open up possibilities for applications in magnetometry, thermometry, and quantum computing.
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关键词
silicon carbide,high-temperature,r-sic
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