12.7 MA/cm2 On-Current Density and High Uniformity Realized in AgGeSe/Al2O3 Selectors
IEEE Electron Device Letters（2021）
Abstract
We propose an AgGeSe/Al
2
O
3
/Pt selector with great potential in a dense memory array. In terms of on-current drive, selectivity, and uniformity, devices with the mixed AgGeSe layer outperform the Ag/Al
2
O
3
/Pt device. The introduction of GeSe not only blocks the diffusion of Ag, but also facilitates the backflow of Ag to the active electrode, therefore increasing the on-current. The ultra-high on-current drive (3 mA and 12.7 MA/cm
2
), high selectivity (10
10
), small variation, high thermal stability, and steep switching slope (0.27 mV/dec) realized in our AgGeSe/Al
2
O
3
/Pt device render it a promising candidate for selector application.
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Key words
Conductive filament,mixed compound electrode,on-current density,selector,threshold switching
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