Electrical Measurement of Cell-to-Cell Variation of Critical Charge in SRAM and Sensitivity to Single-Event Upsets by Low-Energy Protons
IEEE Transactions on Nuclear Science(2021)
摘要
The distribution of single-event upsets (SEUs) in commercial off-the-shelf (COTS) static random access memory (SRAM) has generally been thought to be uniform in a device. However, process-induced variation within a device gives rise to variation within the cell-level electrical characteristic known as the data retention voltage ( V
DR
). Furthermore, V
DR
has been shown to directly influence the critical charge ( Q
C
) necessary for stored data to upset. Low-energy proton irradiation of COTS SRAMs exhibits a preference toward upsetting cells with lower Q
C
. An electrical procedure is presented to map relative cell critical charge values without knowledge of the underlying circuitry, allowing customized device usage. Given cell-level Q
C
knowledge, a device can have its cells “screened” such that those with low Q
C
are not used to store data. This work presents the results such a screening process has on the SEU per bit cross section.
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关键词
Proton radiation effects,radiation hardness assurance,single-event upsets (SEUs),static random access memory (SRAM)
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