Dielectric Contribution Of The Ir Absorption Bands Of Porous Organosilicate Glass Thin Films On A Platinum Sublayer

Reduction of interconnect capacitance is one of the key ways to increase the speed of an ultra-large-scale integrated circuit (ULSI). A porous organosilicate glass (OSG) thin film on a platinum sublayer was used as a test vehicle for modelling the conductor-insulator electrodynamic properties in an ULSI. Investigation of the structure and residual effect on the dielectric contributions of the IR absorption bands is a direct approach to control the dielectric properties of the film. The absorption band dispersion was simulated by the Drude-Lorentz equations within a framework consisting of a two-layer medium model. The contributions to the dielectric permittivity of IR absorption bands in thin OSG films with different volume porosities were determined. It was shown that the total dielectric permittivity in the IR region was approximately 10% lower than that at low frequencies of the order of 100 kHz. An additional contribution can arise as a result of low-energy excitations and H2O electrodipole relaxation in the microwave-THz range.