Investigations on electronic structure, magnetic and optical properties of C and Ti co-doped zincblende GaN for optoelectronic applications

In the current research, we perform a density functional theory study of C, Ti mono- doped (C-@GaN, Ti@GaN), and their co-doped GaN (C-Ti@GaN). We investigate the effect of C, Ti and their co-doping on the structural, electronic, magnetic, and optical properties using the Wien2K code. The formation energy of mono- and co-doped GaN is negative under the N-rich conditions and co-doped material is more stable than the mono-doped material. Optical absorption of mono-doped GaN is redshifted while the absorption of co-doped material is blue shifted. Our calculated results are in accordance with the already reported literature. Since, we did not find magnetism in the C-Ti@GaN material and because of blueshift in absorption spectrum; we suggest that co-doped GaN is more favorable for the UV optoelectronics, power electronics, and the UV solar cells applications than the co-doped materials.