Approaching barrier-free contacts to monolayer MoS 2 employing [Co/Pt] multilayer electrodes

The broken inversion symmetry and time-reversal symmetry along with the large spin–orbit interactions in monolayer MoS 2 make it an ideal candidate for novel valleytronic applications. However, the realization of efficient spin-valley-controlled devices demands the integration of perpendicular magnetic anisotropy (PMA) electrodes with negligible Schottky barriers. Here, as the first demonstration, we fabricated a monolayer MoS 2 field-effect transistor with PMA electrodes: Pt/[Co/Pt] 3 and [Co/Pt] 2 . The I – V curves of PMA/MoS 2 contacts show symmetric and linear behavior reflecting Ohmic nature. The flat-band Schottky barrier heights (SBHs) extracted using the temperature and gate voltage dependence of the I – V curves were found to be 10.2 and 9.6 meV. The observed SBHs are record low values reported thus far for any metal/monolayer MoS 2 contact. High-quality PMA electrodes with almost zero SBH play a paramount role in the future development of novel spintronic/valleytronic devices; hence, our results can open a new route toward the realization of novel technological devices employing two-dimensional materials.