Growth And Photo-Electronic Characteristics Of Short/Mid Wave Dual-Band Infrared Detectors Based On Gasb Bulk And Inas/Gasb Superlattices

In this paper, we demonstrate a bias-selective short/mid wave dual-band infrared detector based on GaSb bulk materials and InAs/GaSb type-II superlattices with 50% cut-off wavelengths of 1.55 mu m and 4.62 mu m respectively. At 77 K, the short wave channel exhibited a peak quantum efficiency of 35.86% at 1.43 mu m and a dark current density of 8.41 x 10(-5) A/cm(2) under the forward 5.0 V bias, thereby providing a Johnson-noise-limited detectivity of 7.63 x 10(11) cm . Hz(1/2)/W. The mid-wave channel showed a quantum efficiency of 10.45% at 4.0 mu m and dark current density of 4.17 x 10(-3) A/cm(2) under -1.35 V bias, resulting in a detectivity of4.05 x 10(10) cm . Hz(1/2)/W. The cross-talk was very low in the short wave channel, but existed in the mid wave channel originated from the contribution of the residual built-in electric field in the short wave channel. Furthermore, the schematic band alignment of N-I-P-P-I-N back-to-back structure was also discussed for further optimization. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement