Space low earth orbit environment simulator for ground testing materials and devices

The design and operation of an experimental installation are described, used for simulating those factors that most greatly affect the properties of materials and microelectronic devices in conditions of the near Earth (Low Earth Orbit) environment. The simulator apparatus is in the form of a cylindrical metal vacuum chamber constructed and mounted to the electron accelerator facility of the Center for the Advancement of Natural Discoveries using Light Emission Synchrotron Research Institute (Armenia) which allows the production of accelerated electrons with the following parameters: ultra-short pulse duration (τ = 4·10−13 s), electron energy 3.5 MeV, pulse current intensity 60 A/cm2, pulse frequency 12 Hz. A comparison may be made with conventional electron accelerators, which employ micro-second pulse duration, and a far lower current intensity of 2∙10−3 A/cm2. Thus, the specific features of this installation enable the simulation of ultra-fast processes as occur in cosmic space or under other extreme conditions. Here, we present the initial results obtained, concerning the influence of high-density electron irradiation on the behavior of the electro-physical properties of silicon crystals. Peculiarities and differences are presented between the results obtained from silicon crystals irradiated by electrons with an energy of 3.5 MeV and a pulse duration of τ = 4·10−13 s, and those from silicon samples irradiated with 7.5 MeV or 50 MeV energy electrons, using conventional electron accelerators.