Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates

•Characterized green III-nitride LEDs with engineered V-defects grown by MOCVD.•Increased GaN on sapphire threading dislocation density by increasing V/III ratio.•Correlated threading dislocation to V-defect density.•Reduced LED VF by increasing V-defect density from 2 × 108 to 5 × 108 cm−2.•Achieved green LEDs with VF of 2.94 V at 20 A cm−2.