Elemental gas phase doping method used for perovskite solar cell transport layer

The invention discloses a novel elemental gas phase doping method, and particularly relates to a preparation method for an elemental gas phase doped electron transport layer applied to a perovskite solar cell. The elemental gas phase doping method is simple in operation, easy to repeat, is various in types of doping elements, and can achieve rapid and uniform doping. The method is characterized inthat a sample is placed in a cavity containing a specific elemental gas for performing a heating reaction, and the doping amount is effectively adjusted by controlling the heating time, temperature,and the concentration of a specific element in the cavity. The method can perform doping of various elements on an electron transport layer in the perovskite solar cell, and the elements include a fluorine element, a chlorine element, a nitrogen element, and the like; a nitrogen-doped electron transport layer is successfully prepared by the method and is applied to the perovskite solar cell; and the current density and photoelectric conversion efficiency of the perovskite solar cell are significantly improved.