Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing
arxiv(2023)
Abstract
The recent demonstration of optically active telecom emitters makes silicon a
compelling candidate for solid state quantum photonic platforms. Particularly
fabrication of the G center has been demonstrated in carbon-rich silicon upon
conventional thermal annealing. However, the high-yield controlled fabrication
of these emitters at the wafer-scale still requires the identification of a
suitable thermodynamic pathway enabling its activation following ion
implantation. Here we demonstrate the efficient activation of G centers in
high-purity silicon substrates upon ns pulsed laser annealing. The proposed
method enables the non-invasive, localized activation of G centers by the
supply of short non-stationary pulses, thus overcoming the limitations of
conventional rapid thermal annealing related to the structural metastability of
the emitters. A finite-element analysis highlights the strong non-stationarity
of the technique, offering radically different defect-engineering capabilities
with respect to conventional longer thermal treatments, paving the way to the
direct and controlled fabrication of emitters embedded in integrated photonic
circuits and waveguides.
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