纳米压印技术制备Si基GaN纳米柱图形化衬底
Journal of Chongqing Normal University(Natural Science Edition)（2014）
Abstract
采用纳米压印和反应离子刻蚀技术,通过实验研究反应离子刻蚀时间与GaN纳米柱高度的相关性,成功地在Si基GaN衬底上制备出了GaN纳米柱图形化衬底.SEM表征分析发现在图形化衬底上所制备的GaN纳米柱形貌均匀、排列整齐;室温光致发光光谱分析发现GaN纳米柱图形化衬底与GaN材料相比带边发光峰出现2.1 nm的红移,发光强度增强.研究结果表明GaN纳米柱内应力得到释放且具有光子晶体的作用.
MoreKey words
nanoimprint lithography,GaN nanocolumns,PL spectrum
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