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微纳米沟道光栅加工工艺研究

Guangwei LI

Journal of Chongqing University of Science and Technology(Natural Sciences Edition)（2016）

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Abstract
以ICP-501为刻蚀设备,以C4F8和SF6为刻蚀气体,以Xe气为辅助气体,以lift-off方法得到的铬掩模对966线/mm的光栅进行刻蚀.结果表明,在选定的工艺条件下,刻蚀光栅结构与理论设计较为符合,衍射效率也接近于理论设计.
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