ZnO的p型掺杂研究进展
Journal of Hebei Normal University (Natural Science Edition)(2014)
Abstract
ZnO是一种宽带隙Ⅱ~Ⅵ族半导体材料,由于其独特的性能,如高电子迁移率、广泛的激子结合能,是一种很有前途的光电器件材料;但因本征施主缺陷和施主杂质引起的自补偿效应等很难使其有效地实现n型向p型导电的转变。介绍了ZnO的p型掺杂机理、掺杂元素分类及国内外对p型ZnO研究的最新进展。
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Key words
p-type ZnO,doping mechanism,doping elements
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