Search
ChatPaper
AI Writing
analysis
Analysis
编组
Open Data
more
More
RankingsMust ReadingJournal&ConferenceAI TRAI HistoryMaster Reading TreeXiaomai's Star TalentsTrajectoryTalentNDI TrackerAI sign LanguageOpen
VIPCreated with Sketch.

脉冲激光烧蚀制备纳米硅晶粒成核生长的热力学条件研究

Ai-li QIN,Li-zhi CHU,Ze-chao DENG,Xue-cheng DING,Ying-long WANG

Journal of Synthetic Crystals（2017）

Cited 0|Views8
No score
Abstract
文中利用蒙特卡洛方法,引入成核生长模型,研究了纳米硅晶粒成核生长过程.结合宏观阻力模型,计算了纳米硅成核和生长所对应的过饱和度范围.结果显示,衬底的二次溅射,造成成核次数增多,生成小尺寸纳米晶粒的数量增加;晶粒成核过程和生长过程所需要的过饱和度范围不同,过饱和度较大(>2600)时成核次数多生长次数少;而过饱和度在250～2600时生长次数多成核次数少.
More
Translated text
Key words
Monte Carlo method,drag force model,nucleation and growth
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined