高质量N型SiC单晶生长及其器件应用

Journal of Synthetic Crystals(2015)

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Abstract
采用物理气相传输法在(0001)面偏向<11-20>方向4°的籽晶上生长了掺氮低电阻率碳化硅(SiC)单晶.结合碳化硅邻位面生长机制,通过优化温场设计,在近平温场下生长出了晶型稳定、微管密度低、高结晶质量的低电阻率4H-SiC单晶.在加工的“epi-ready”SiC衬底上进行了同质外延,获得了光滑的外延层表面.利用该外延材料研制了600V/10 A SiC肖特基二极管,器件的直流性能与进口衬底结果相当,反向漏电成品率高达67%.另外研制了600 V/50 A SiC肖特基二极管,器件的直流性能也达到了进口衬底水平.
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Key words
SiC,physical vapor transport,epitaxy,schottky diode
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