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直接耦合双耦合环高温超导dcSQUID中增大有效面积的图形设计

CHINESE JOURNAL OF LOW TEMPERATURE PHYSICS(2002)

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Abstract
设计和制作了一种新型的双耦合环的直接耦合高T.dc SQUD结构.根据Y.Zhang等在高T.rf SQUID中用图形填充内孔使电感减小的原理,在直接耦合dc SQUID中,用在耦合环内孔中图形填充的方法减小电感,进而增大Ap/Lp,以增大总的有效面积.用双晶衬底所做的对比实验表明,对于我们所设计的几何结构,有效面积增大了17%.
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