等离子体发射光谱法测定碳化硅中的游离总硅含量
Chemical Analysis and Meterage(2013)
Abstract
针对分光光度法测定游离总硅含量受干扰因素多、测试数据不稳定的缺点,探讨了采用ICP-AES法测定碳化硅中游离总硅含量。采用行星球磨仪对碳化硅样品进行研磨,以硝酸钠、硝酸、氢氟酸作溶剂,采用微波消解法处理样品。选择212.412 nm特征谱线并以其强度(I )与对应的硅浓度(c)建立校准曲线,硅的质量浓度在10~100μg/mL范围内与特征谱线强度呈良好的线性关系,线性方程为I=233.76c+86.94,线性相关系数r=0.997,检出限为0.027μg/mL。测定结果的相对标准偏差为1.35%~2.79%(n=6),加标回收率为97.6%~108.0%。该法测定碳化硅中游离总硅含量是可行的。
MoreTranslated text
Key words
silicon carbide,total free silicon,content,determination
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined