硅基AIGaN-MOS功率器件热阻压降的测试
scientific and technological innovationInformation（2018）
Abstract
研究了硅基AIGaN-MOS功率器件的热阻和压降这二个电热参数,提出了参数的测试原理和方法,给出了一种测试设备的电原理图.成果来自于安徽省省级重点科技攻关项目"硅基AlGaN/GaN-HEMTs功率新器件研发".
MoreAI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined