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一种高温下测量薄膜电阻温度特性的方法

Zhi-hao ZHANG,Yong-ming SHI,Jun WANG,Bin MA

Science Technology and Engineering（2014）

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Abstract
介绍了Rymaszewski四探针法测薄膜方块电阻原理,设计并搭建了可测室温到550℃的四探针测试仪.该系统可在保护气体下变温测量薄层电阻,弥补了四探针法在较高温度测量薄膜电阻率的不足.制备并测试了多晶硅及铂薄膜的电阻温度特性,用多项式拟合了在该温度范围内电阻温度系数,并分析了方法可靠性.
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Key words
four-point probe method,Rymaszewski,high temperature,poly-silicon,Pt,TCR
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