Analysis of transient behavior of AlGaN/GaN MOSHFET

The threshold voltage of HfO2/AlGaN/GaN MOSHFETs was dependent on the time after the bias stress and the transconductance decreased at large gate voltages. These behaviors were explained based on the two-dimensional device simulation assuming three trap levels of EC−ET=0.4, 0.765, 1.65eV with short, medium and long time constants at the HfO2/AlGaN interface, which were obtained based on the analytical consideration of the experimental results.