High On-Current 2D nFET of 390 μA/μm at VDS = 1V using Monolayer CVD MoS2 without Intentional Doping

We demonstrate the highest nFET current of 390 μA/μ m at V _DS = 1 V based on CVD Mos ₂ mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION/IOFF ratio of 4 × 10 ₈ , and nearly zero DIBL. The high on-current achieved in monolayer Mos ₂ nFET is mainly attributed to the thin EOT ~2 nm of HfO _x gate oxide, short gate length of 100 nm, and low contact resistance ~1.1 kω- μm.