An Emission Stable Vertical Air Channel Diode By A Low-Cost And Ic Compatible Boe Etching Process

Nanoscale air/vacuum channel devices have shown great potential in extreme environments, high speed and low power consumption applications. Progress in fabrication, structure and material optimization keeps emerging. However, it remains challenging to achieve a stable large current emission at low voltages, which limit the practical application of nanoscale air/vacuum channel devices. Here, a vertical structure consisting of two asymmetric flat emitters and a sub-100 nm air channel is proposed and fabricated by a low-cost and IC compatible BOE etching process. Typical diode characteristics have been demonstrated and controlled by the channel length. More importantly, emission currents up to several hundreds of microamp have been achieved in air with voltages lower than 2 volts and remain stable under sweep, fixed and periodic voltages. Along with the stable emission, a rise/fall time of 25 ns has been achieved for 1 MHz input signal. The present study provides an emission-stable nanoscale air channel diode with good manufacturing and integration possibilities, which can be an element for the future logic circuits of nanoscale air/vacuum channel electronics.