N2流量对HiPIMS制备Al-N共掺杂ZnO薄膜的性能影响

Qian LI,Yuchen ZHANG,Zhengduo WANG,Lizhen YANG,Haibao ZHANG,Zhongwei LIU,Qiang CHEN

Vacuum and Cryogenics（2019）

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Abstract

采用高功率脉冲反应磁控溅射(HiPIMS)在玻璃基底上沉积Al-N共掺氧化锌(ZnO)薄膜,研究氮气(N2)流量对Al-N共掺杂ZnO薄膜的晶体结构、表面形貌和电学性质的影响.测量结果表明,N2流量对掺杂的ZnO薄膜电导率类型转变和光电性能有很大影响:当N2流量为8 mL/min时,掺杂ZnO薄膜在可见光波段透过率大于85％,薄膜导电类型为n型;随着N2流量的增加,薄膜经历n-p-n型的转变过程.当N2流量为20 mL/min时,掺杂的ZnO结晶性最好,晶体缺陷少、XRD衍射峰半峰宽(FWHM)最小、表面粗糙度也低,为p-ZnO.薄膜电学性能测量显示:载流子浓度、迁移率、电阻率分别为5.47×1017 cm-3、2.7 cm2/Vs、4.51Ωcm.

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Key words

zno films,reactive magnetron,nitrogen flow rate,co-doped

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