CVD单晶金刚石[NV]和[SiV]缺陷的抑制与消除

Xiaolei WU,Shuai XU,Yanjun ZHAO,Xiao WU,Haofeng CHANG,Xingxing GUO

Diamond & Abrasives Engineering（2020）

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Abstract

反应气体中添加体积分数0.001％的N2,研究CVD金刚石PL(photoluminescence spectroscopy,PL)光谱发现,与N杂质相关的[NV]0与[NV]-和与Si杂质相关的[SiV]是金刚石中的主要杂质缺陷.经过高温高压(high temperature and high pressure,HPHT)处理后,[NV]0峰的强度被削弱,[NV]-峰的强度被增强,[SiV]峰的强度被显著增强,并新出现了[SiV]-宽峰.反应气体中N2体积分数降至0.0001％并添加0.5％的O2后,[NV]0与[NV]-峰消失,O2升高至1％后[SiV]峰强度出现了明显降低,继续升高O2含量,[SiV]峰强度下降趋势变缓,这些现象证明了添加少量O2有助于CVD金刚石中N和Si杂质缺陷的抑制与消除.

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