抑制4H-SiC功率器件双极型退化的复合提高层设计
Power Electronics(2020)
Abstract
“双极型退化”是目前影响4H-碳化硅(SiC)双极型器件稳定工作的重要问题.针对此现象,以万伏级的超高压PiN二极管为例,详细介绍在衬底与外延层之间如何设计合适的“复合提高层”以抑制双极型退化.研究了器件工作电流密度和“复合提高层”少子寿命对设计“复合提高层”的影响.结果 表明,在一定的工作电流密度下,“复合提高层”少子寿命越短,所需“复合提高层”厚度越薄.
MoreAI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined