AlN薄膜制备技术研究
Piezoelectrics & Acoustooptics（2016）
Abstract
采用磁控溅射法制备了AlN薄膜并研究了射频(RF)等离子清洗对AlN薄膜结晶取向度的影响,实验表明,RF等离子清洗基片3 min后AlN薄膜c轴取向摇摆曲线半峰宽达到1.3°;通过Mo薄膜衬底对AlN薄膜结晶取向度的影响发现,取向度好的Mo薄膜衬底有利于c轴取向AlN薄膜的生长;Ar气体流量对AlN薄膜应力的影响使AlN薄膜应力从-390(压应力)～73 MPa(张应力)可调.
MoreKey words
aln thin film preparation
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