Chrome Extension
WeChat Mini Program
Use on ChatGLM
VIPCreated with Sketch.

应用α源评估静态存储器的软错误

Chao-hui HE, Xiu-pei YANG,Wei-wei ZHANG,Jun CHU,Xue-ming REN,Chun-mei XIA, Hong-quan WANG, Jiang-bo XIAO, Xiao-lin LI

ATOMIC ENERGY SCIENCE AND TECHNOLOGY（2006）

Cited 0|Views8
No score
Abstract
存储器的软错误直接关系到产品的可靠性,为比较3种器件的抗软错误能力,实验测量了3种静态存储器(SRAM)的单粒子翻转错误数,计算了单粒子翻转截面和失效率.从单粒子翻转截面角度讲,A166M器件抗α粒子的能力最好,其次为B166M,最差是B200M.从失效率的角度讲,B166M的平均失效率比B200M的小,且两者都比A166M的小.
More
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined