CVD金刚石热沉封装高功率半导体激光器的热特性
Journal of Optoelectronics·Laser(2019)
Abstract
本文以自支撑CVD金刚石膜作为半导体激光器线阵的封装热沉,从而改进其热特性.首先,以电子辅助化学气相沉积(EACVD)制备自支撑金刚石膜.在沉积工艺中,提出了优化O2流量刻蚀非金刚石相.使金刚石膜品质得到改进,从而提高其导热率.然后,测试了基于不同氧流量下制备金刚石热沉封装的半导体激光器线阵的电光特性,并对封装器件的热特性进行了分析.结果 表明:通入O2流量为每分钟5 sccm时,制备的金刚石热沉导热率可达1812.3 WK-1m-1.O2流量5 sccm制备金刚石热沉的封装器件的斜率效率为1.30 W/A,电光转换效率最大值可达60.6%.在连续波30 A时,该封装器件的光谱红移波长为2.02 nm,器件工作温度降低4.9K.器件的传热路径热阻降低28.4%,表现出优异的可靠性.
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