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太赫兹固态放大器研究进展

Fangjin Guo,Weibo Wang,Zhongfei Chen, Hongzheng Sun, Xibang Zhou,Hongqi Tao

Application of Electronic Technique（2019）

Cited 4|Views3
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Abstract
随着半导体技术的发展,晶体管特征频率不断提高,已经进入到太赫兹(THz)频段,使得固态器件可以在THz频段工作.THz放大器可以将微弱的信号进行放大,在THz系统中起着关键作用.介绍了基于氮化镓(Gallium Nitride,GaN)高电子迁移率晶体管(High Electron Mobility Transistor,HEMT)器件、磷化铟(Indium Phosphide,InP)HEMT器件和InP异质结双极晶体管/双异质结双极晶体管(InP Heterojunction Bipolar Transistor/Double Heterojunction Bipolar Transistor,HBT/DHBT)器件的THz单片放大器研究进展.
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Key words
thz,solid state devices,monolithic amplifier
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