Electrically pumped continuous-wave III–V quantum dot lasers monolithically grown on silicon

We demonstrate electrically pumped continuous-wave InAs/GaAs quantum dot lasers monolithically grown on silicon substrates with a low threshold current density of 62.5 Acm ^-2 , a room temperature output exceeding 105 mW, operation up to 120 °C, and long extrapolated lifetime exceeding 100,000 h.