Electrically pumped continuous-wave III–V quantum dot lasers monolithically grown on silicon
2016 International Semiconductor Laser Conference (ISLC)(2016)
摘要
We demonstrate electrically pumped continuous-wave InAs/GaAs quantum dot lasers monolithically grown on silicon substrates with a low threshold current density of 62.5 Acm
-2
, a room temperature output exceeding 105 mW, operation up to 120 °C, and long extrapolated lifetime exceeding 100,000 h.
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关键词
Quantum dot laser,Si photonics,monolithic integration
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