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刻蚀小尺寸CCD接触孔工艺研究

Pengfei XIANG,Tao DENG,Xiuwei YANG,Jianwei GAO

Semiconductor Optoelectronics（2014）

Cited 0|Views6
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Abstract
采用CF4,CHF3,Ar三种工艺气体进行小尺寸CCD接触孔刻蚀实验,研究了不同气体配比、不同射频功率对刻蚀速率、选择比、条宽控制、侧壁形貌等参数的影响.通过优化工艺参数,比较刻蚀结果,最终获得了适合于刻蚀CCD小孔的工艺条件.
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