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InP/InGaAs探测器氮化硅钝化膜的ICPCVD生长技术

Yanni GONG,Wenyun YANG,Shaopei YANG,Mingguo FAN,Zhujun CHU

Infrared Technology（2019）

Cited 0|Views6
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Abstract
采用ICPCVD工艺对InP/InGaAs探测器进行SiNx薄膜钝化,讨论了不同气体比例、射频功率和反应压力对SiNx薄膜应力和致密性的影响.初步得到了低应力、良好致密性的SiNx薄膜沉积工艺.利用此工艺制作的InP/InGaAs探测器在偏压为-10 mV的暗电流比PECVD工艺制作的器件降低了一个数量级,为4.4×10-8 A.
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