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基于40 nm工艺的单比特超宽带ADC

Zheng YI,Xuan GUO,Xuqiang ZHENG,Eryou JI,Danyu WU

Research & Progress of Solid State Electronics（2020）

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Abstract
采用TSMC 40 nm工艺实现了一款宽带高速ADC.芯片采用时间交织的结构,单通道采用Flash结构,采样率为5 GS/s,8个子通道交织达到40 GS/s的采样率.测试结果表明,芯片的采样率可以达到38.4 GS/s,且在该采样率下,输入信号带宽可达18 GHz,灵敏度小于-20 dBm,可以满足单比特超宽带收发系统的需求.
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