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As/P气氛转换对InGaAs/InP异质结界面的影响研究

Wei WANG,Hanchao GAO,Hailong YU,Ben MA,Zhijun YIN,Zhonghui LI

Research & Progress of Solid State Electronics（2020）

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Abstract
采用分子束外延(MBE)方法,在半绝缘InP(100)衬底上外延InGaAs/InP超晶格结构.通过优化As、P转换时间,研究了As、P气氛转换对InGaAs/InP异质结界面特性的影响.经原子力显微镜测试和X射线衍射谱分析,样品在关P阀5s、开As阀5s的生长条件下,表面均方根粗糙度(RMS)为0.205 nm,单边卫星峰达20级,一级卫星峰的半高宽(FWHM)为145.05 arc sec,表明界面控制良好.
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