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与HBT工艺兼容的新型负阻器件的研制与分析

Haitao Qi,Weilian Guo,Shilin Zhang,Huilai LIANG,Luhong Mao

RESEARCH & PROGRESS OF SOLID STATE ELECTRONICS（2005）

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Abstract
在HBT工艺基础上,通过对器件结构的特殊设计,研制出了一类新型三端负阻器件,其恒压控制型负阻的PVCR大于800,并伴有恒流控制型负阻.通过atlas器件模拟软件进行模拟后对其物理机制进行了解释.该器件既能保持HBT高频、高速的特点,又具有负阻、双稳、自锁等特性,同时与普通台面HBT工艺兼容,易于集成,是一种具有研究和应用价值的新型负阻器件.
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novel ndr device
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