高电源抑制比低温度系数超低功耗基准电压源
Microelectronics(2017)
Abstract
在0.18 μm标准CMOS工艺模型下,利用亚阈值及深线性区MOS管的特性,设计了一种新颖的偏置电流产生电路,并采用此电路设计出一种具有高电源抑制比、低温度系数的全MOS型基准电压源.该电压源采用全MOS结构,不使用电阻,功耗超低.电源电压在0.9~3 V变化时,该电压源均可正常工作,输出电压约为558 mV.1.2V电源电压下,在-55℃~100℃温度范围内,该电压源的温度系数为2.3×10-5/℃,低频电源抑制比为-81 dB,总功耗约为127 nW.
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