一种使沟槽侧角圆滑的新颖STI工艺

Xiang GU,Haiming XU,Haibo CHEN,Jianwei WU

Electronics and Packaging（2017）

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Abstract

介绍了一种使沟槽侧角圆滑的STI工艺技术,该技术在沟槽腐蚀完,通过湿法工艺去除部分氮化硅(Nitride Pull back),再正常生长线性氧化层,使槽的侧角更加圆润光滑,同时减小了沟槽Divot深度.该工艺避免了附加高温热过程所导致的缺陷扩散和膜应力增大问题,现已成功应用于0.13 μm逻辑工艺.采用该工艺完成的器件,反窄沟道效应明显减弱,窄沟器件的漏电有效降低.

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