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SiC外延炉加热系统的设计

Techao CHEN,Boqi LIN,Changlin LONG,Hui XIAO,Fan HU, Wenjing CHENG,Jieqin DING,Yiming YANG,Jiehong GONG

Equipment for Electronic Products Manufacturing（2017）

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Abstract
碳化硅材料是一种宽禁带半导体材料,其耐高温、耐高压的特性特别适合制作大功率半导体器件.近几年来,随着SiC器件生产工艺技术的突破,碳化硅器件得到了快速的发展,其相关设备也在不断开发并走向成熟.简要介绍了SiC外延生长设备中加热器的设计方法、温度控制以及温度均匀性调节方法,通过实验验证了温度均匀性及控制精度,较好的满足了SiC外延炉对温度稳定性及高精度控制的要求
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