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影响SiC外延生长速率的相关因素探讨

Jieqin DING,Techao CHEN,Boqi LIN,Changling LONG,Yiming YANG,Jiehong GONG

Equipment for Electronic Products Manufacturing（2017）

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Abstract
研制了水平热壁式外延沉积系统,设计了双加热器温控系统和水平三层流喷淋系统,介绍了温场和流场获得方法.在偏4°的Si面4H-SiC单晶衬底上进行了工艺验证.研究了生长温度、C/Si以及SiH 4流量对SiC外延生长速率的影响,通过主要参数的综合调整,生长出了表面光滑的SiC外延膜.
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