影响SiC外延生长速率的相关因素探讨
Equipment for Electronic Products Manufacturing(2017)
Abstract
研制了水平热壁式外延沉积系统,设计了双加热器温控系统和水平三层流喷淋系统,介绍了温场和流场获得方法.在偏4°的Si面4H-SiC单晶衬底上进行了工艺验证.研究了生长温度、C/Si以及SiH 4流量对SiC外延生长速率的影响,通过主要参数的综合调整,生长出了表面光滑的SiC外延膜.
MoreAI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined