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气体流量对氢化非晶氧化硅(a-SiOx:H)钝化性能影响

Yuping HE,Xian YUAN,Ning LIU,Haibin HUANG

Journal of Nanchang Institute of Technology（2018）

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Abstract
本征钝化层是非晶硅/晶体硅异质结太阳电池的核心技术之一,以n型直拉单晶硅片(n-Cz-Si)为衬底采用热丝化学气相沉积法(HWCVD)沉积氢化非晶氧化硅(a-SiOx:H),研究气体流量对其钝化性能的影响.结果表明,CO2,H2,SiH4流量均能显著的影响a-SiOx:H钝化性能,最优钝化效果CO2,H2,SiH4流量分别为0.3 sccm,16sccm,10 sccm,双面沉积a-SiOx:H后硅片的少子寿命达到了466 s(注入浓度取1×10 cm-3).
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