Statistical Characterization and Modelling of Gate-Induced Drain Leakage Variability in Advanced FDSOI Devices

T. A. Karatsori,C. Cavalcante, J. Lacord,P. Batude,C. Theodorou,G. Ghibaudo

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)（2019）

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摘要

A detailed statistical characterization of gate-induced drain leakage variability in FDSOI devices is carried out. An analytical model is developed for the drain current variability, covering the on-state and off-state MOSFET operation regions.

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关键词

GIDL,variability,characterization,modelling,FDSOI

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