Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects

J. Erlekampf,M. Rommel, K. Rosshirt-Lilla,B. Kallinger,P. Berwian,J. Friedrich,T. Erlbacher

Journal of Crystal Growth（2021）

引用 4|浏览6

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摘要

•Additional Shockley-Read–Hall recombination center beside Z1/2.•Impact of substrate contamination on the minority carrier lifetime of epitaxial layers.•Possible incorporation of tungsten from substrate into the epitaxial layer.

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关键词

A1. Point defects,A1. Impurities,B1. Silicon carbide,A3. Chemical vapor deposition processes,A1. Substrates,A1. Minority carrier lifetime

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