Growth and Characterization of TiO2 Thin Films by PLD Technique

In this work, the structural, optical and electronic properties of TiO2 thin films grown on glass substrate by Pulse Laser Deposition (PLD) technique are presented. The stoichiometry and the oxidation degree of films were analyzed by considering the Ti 2p and O 1s core energy levels with high resolution X-Ray Photoelectron spectroscopy (XPS). The structural characteristics of the thin films have been investigated by X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM) technique. The optical absorption region of growth TiO2 films were analyzed by Photoluminescence spectroscopy (PL) technique. Spin-orbit coupling splitting of Ti 2p states was measured as 5.7 eV. The characterizations promote the existence of the metal and oxygen vacancies at the surface of film. These point defects enhance the hysteretic transport properties of the TiO2 metal oxide.