Soft Chemical Mechanical Polishing Pad For Oxide Cmp Applications

Chemical mechanical polishing (CMP) is widely accepted as the best planarization technique for fabricating nanoscale devices. A soft CMP pad that can enable higher oxide removal rates (RRs) and good planarity has been proposed for oxide CMP applications. In this study, three pads namely, Pad-1 (hard), Pad-2 (soft), and a commercial pad (hard) were used to polish blanket oxide, and STI patterned wafers. The Pad-2 demonstrated significantly higher RRs and better planarization than the hard pads. Post-polish pad texture analysis on Pad-2 showed a uniform surface asperity distribution. This is due to the novel method of pad manufacturing, which enables precise material placement and consistent pore construction. (c) 2021 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BYNC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: permissions@ioppublishing.org.