Compact Modeling of Schottky Gate-all-around Silicon Nanowire Transistors with Halo Doping

A physics-based compact model for halo doped Silicon Nanowire Transistor with Schottky-barrier (SB) contact at the source/drain (S/D) junctions is developedconsidering the quasi-2D surface-potential solution. The halo implant is considered only at the source side to avoid hot electron effects in the high field drain region. The surface potential and electric field expressions are derived using a systematic approach. The impact of a single halo at the source is analyzed using the energy band model. The analysis shows that the halo increases the electron energy at the source side and suppresses the short channel effects. Moreover, high doping of halo decreases the tunneling barrier width, thereby increasing the ON-state current. Physics-based modeling of the surface potential at the halo boundary has ensured that the model preserves accuracy and continuity.